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Produkt beskrivelse
This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
Detaljer
- ISBN13 9781351751032
- Udgivet 2017
- Forlag CRC Press
- Udgave 1
- Sprog Engelsk