Bemærk venligst, at den normale 14 dages fortrydelsesret ophører ved modtagelse af adgang til e-bogen.
Produkt beskrivelse
This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
Detaljer
- ISBN13 9781351751032
- Udgivet 2017
- Forlag CRC Press
- Format Elektronisk medie
- Udgave 1
- Sprog Engelsk